Acta Optica Sinica, Volume. 32, Issue 6, 631006(2012)

Phase Change Properties of AgInSbTe Thin Films under Single Nanosecond Laser Pulse Irradiation

Zhai Fengxiao1、*, Liang Guangfei2, Wang Yang2, and Wu Yiqun2
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  • 1[in Chinese]
  • 2[in Chinese]
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    Ag8In14Sb55Te23 (AIST) films are deposited on K9 glass substrates by DC magnetron sputtering. A pump-probe system is employed to observe reflectivity change process in real time. The results show that phase transition driven by nanosecond laser pulses can be achieved in a proper fluence range on AIST thin films. The presence of liquid phase is identified by transient reflectivity level between those of the amorphous and crystalline phases. Crystallization time and reflectivity change are linearly proportional to the energy at lower pulse fluences.

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    Zhai Fengxiao, Liang Guangfei, Wang Yang, Wu Yiqun. Phase Change Properties of AgInSbTe Thin Films under Single Nanosecond Laser Pulse Irradiation[J]. Acta Optica Sinica, 2012, 32(6): 631006

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    Paper Information

    Category: Thin Films

    Received: Jan. 9, 2012

    Accepted: --

    Published Online: May. 16, 2012

    The Author Email: Fengxiao Zhai (fxzhai2008@hotmail.com)

    DOI:10.3788/aos201232.0631006

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