Journal of Advanced Dielectrics, Volume. 12, Issue 1, 2160002(2022)
Preparation and properties of – ceramics and polycrystalline films
K. M. Zhidel1、* and A. V. Pavlenko1,2
Author Affiliations
1Research Institute of Physics, Southern Federal University, No. 194 Stachki Avenue, Rostov-on-Don 344090, Russia2Federal Research Centre, The Southern Scientific Centre of the Russian Academy of Sciences, No. 41 Chekhova street, Rostov-on-Don 344090, Russiashow less
In this paper, we report the successful growth of 0.5BiFeO3–0.5O3/SrTiO3/Si(001) heterostructure using RF-cathode sputtering in an oxygen atmosphere. The deposited films have been investigated by X-ray diffractometry and spectroscopic ellipsometry (SE). 0.5BiFeO3–0.5O3 films on silicon substrates with a strontium titanate buffer layer are single-phase, polycrystalline with a texture in the 001 direction. The unit cell parameters calculated in the tetragonal approximation were = 4.005 ± 0.001 ; = 3.995 ± 0.001 . The presence in the films of small unit cell deformation arising from different unit cells parameters of the film and substrate is observed. Dielectric properties and capacitance-voltage characteristics have been measured. The ellipsometric parameters have been obtained.In this paper, we report the successful growth of 0.5BiFeO3–0.5O3/SrTiO3/Si(001) heterostructure using RF-cathode sputtering in an oxygen atmosphere. The deposited films have been investigated by X-ray diffractometry and spectroscopic ellipsometry (SE). 0.5BiFeO3–0.5O3 films on silicon substrates with a strontium titanate buffer layer are single-phase, polycrystalline with a texture in the 001 direction. The unit cell parameters calculated in the tetragonal approximation were = 4.005 ± 0.001 ; = 3.995 ± 0.001 . The presence in the films of small unit cell deformation arising from different unit cells parameters of the film and substrate is observed. Dielectric properties and capacitance-voltage characteristics have been measured. The ellipsometric parameters have been obtained.
