Chinese Journal of Quantum Electronics, Volume. 18, Issue 2, 103(2001)
Measuring Effective Stimulated Emission Cross-sections of Nd:YVO4 Crystals by the Theory of LD End-Dumped Solid-state Lasers Wang Zhengping（State Key Laboratory of Crystal
The theory of LDend-pumped solid-state lasers is analyzed, and a method that measures the effectivestimulated emission cross-section σe of laser crystal is ascertained. We compare the threshold andslope efficiency of four Nd:YVO<sub>4</sub>crystals which have different doping levels,and calculate the σeof these crystals with upper-level life-times that have measured by us. Our results showthat the 1.9at% Nd:YVO<sub>4</sub>crystal has a σeTe of 18.3 μscm<sup>2</sup>which is largest in all the four samples.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measuring Effective Stimulated Emission Cross-sections of Nd:YVO4 Crystals by the Theory of LD End-Dumped Solid-state Lasers Wang Zhengping（State Key Laboratory of Crystal[J]. Chinese Journal of Quantum Electronics, 2001, 18(2): 103
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