Acta Optica Sinica, Volume. 30, Issue s1, 100509(2010)

Nd:LuVO4/Cr:YAG Microchip Pulsed Laser

Liao Mingdun1、*, Lan Ruijun1,2, Wang Zhengping1, Yu Haohai1, Zhang Huaijin1, Chen Lijuan1, Zhuang Shidong1, Guo Lei1, Zhao Yongguang1, Wang Jiyang1, and Xu Xinguang1
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  • 2[in Chinese]
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    With Cr:YAG as saturable absorber and output coupler, passively Q-switched microchip laser was obtained for laser diode (LD) end-pumped Nd:LuVO4 crystal. When the pump power was 13.86 W, a maximum average output power of 0.508 W was obtained, corresponding to an optical conversion efficiency of 3.6%, and a slope efficiency of 8.3%. The highest repetition rate, largest pulse energy and shortest pulse width were measured to be 23.95 kHz, 21.21 μJ, and 4.5 ns, respectively, corresponding to a peak power of 4.71 kW.

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    Liao Mingdun, Lan Ruijun, Wang Zhengping, Yu Haohai, Zhang Huaijin, Chen Lijuan, Zhuang Shidong, Guo Lei, Zhao Yongguang, Wang Jiyang, Xu Xinguang. Nd:LuVO4/Cr:YAG Microchip Pulsed Laser[J]. Acta Optica Sinica, 2010, 30(s1): 100509

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    Paper Information

    Category: OPTOELECTRONICS

    Received: Jun. 7, 2010

    Accepted: --

    Published Online: Dec. 17, 2010

    The Author Email: Mingdun Liao (mdliao@mail.sdu.edu.cn)

    DOI:10.3788/aos201030.s100509

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