Chinese Optics Letters, Volume. 9, Issue 1, 011602(2011)

Temperature dependence of photoluminescence property in BaIn2O4

Huiyong Deng1, Qiwei Wang1, Ping Ren2, Jie Wu1, Junchao Tao1, Xin Chen1, and Ning Dai1
Author Affiliations
  • 1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2Department of Energy Sources and Environment Engineering, Shanghai University of Electric Power, Shanghai 200090, China
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    The temperature-dependent photoluminescence (PL) spectra of BaIn2O4, prepared by coprecipitation, are measured and discussed. Aside from the reported 3.02-eV violet emission, the 1.81-eV yellow emission involved with oxygen vacancy is also observed at room temperature wherein the deep donor level is at 1.2 eV. With the temperature increasing, the peak energies for both emissions show a red shift. Moreover, the yellow emission intensity decreases while the violet emission intensity increases. The temperature dependence of the yellow emission intensity fits very well into the one-step quenching process equation, indicating a fitted activation energy at 19.2 meV.

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    Huiyong Deng, Qiwei Wang, Ping Ren, Jie Wu, Junchao Tao, Xin Chen, Ning Dai. Temperature dependence of photoluminescence property in BaIn2O4[J]. Chinese Optics Letters, 2011, 9(1): 011602

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    Paper Information

    Received: Jul. 16, 2010

    Accepted: Sep. 21, 2010

    Published Online: Jan. 7, 2011

    The Author Email:

    DOI:10.3788/COL201109.011602

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