Acta Optica Sinica, Volume. 22, Issue 11, 1296(2002)
Experimental Study on Infrared Film of Antireflective Amorphous carbon on Silicon
Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature. Morphology was observed with scanning electron microscope (SEM). Raman scattering spectroscopy and Fourier transform infrared spectroscopy (FTIR) were analysised. It is found that these films had little of graphet micro crystaline in their matrix. A Raman peak for amorphic diamond was found around 1200 cm -1 . These films were transparent in infrared and suit for antireflective film deposited on silicon in the range of wavelength short than 8 μm.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Experimental Study on Infrared Film of Antireflective Amorphous carbon on Silicon[J]. Acta Optica Sinica, 2002, 22(11): 1296