Journal of Terahertz Science and Electronic Information Technology , Volume. 20, Issue 6, 513(2022)
Progress in the study of irradiation effects of graphene and graphene field effect transistors
Graphene has become a type of important material for the construction of new nanoelectronic devices due to its high mobility, high thermal conductivity, good flexibility as well as mechanical strength. When graphene materials and their electronic devices are placed in a scene containing irradiation factors, the lattice structure can be changed. The charges then are accumulated due to interactions with high-energy photons and charged particles, resulting in changes in the performance of graphene materials and electronic devices. This paper mainly reviews the main effects of typical irradiation factors on graphene and its devices and the research progress, aiming to summarize the physical effects induced by irradiations on graphene and its electronic devices. This work deepens the understanding of the irradiation effect on graphene materials and devices, and lays a foundation for promoting its practical application in the irradiation scene.
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SHI Mingxia, WANG Huanling, CHEN Feiliang, LI Mo, ZHANG Jian. Progress in the study of irradiation effects of graphene and graphene field effect transistors[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(6): 513
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Received: Feb. 26, 2022
Accepted: --
Published Online: Aug. 15, 2022
The Author Email: Mingxia SHI (mxshiemily@std.uestc.edu.cn)