Infrared and Laser Engineering, Volume. 37, Issue 2, 270(2008)

Effect of electron irradiation on the GaN-based p-i-n UV detector

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]*
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of electron irradiation on the GaN-based p-i-n UV detector[J]. Infrared and Laser Engineering, 2008, 37(2): 270

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    Paper Information

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    Received: Jun. 2, 2007

    Accepted: Aug. 6, 2007

    Published Online: Aug. 17, 2008

    The Author Email: (龚海梅(1965-)男江苏宿迁人研究员博士生导师中国宇航)

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