Terahertz generation from Si_(3)N_(4) covered photoconductive dipole antenna

Wei Shi; Jingzhou Xu; X.-C. Zhang

Chinese Optics Letters, Volume. 1, Issue 5, 05308(2003)

Wei Shi¹, Jingzhou Xu², and X.-C. Zhang^2、*

Author Affiliations

¹Department of Applied Physics, Xi’an University of Technology, Xi’an 710048

²Center for Terahertz Research, Rensselaer Polytechnic Institute, Troy, NY 12180, USA

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We observe enhanced terahertz (THz) radiation generated from a Si_(3)N_(4) film-coated GaAs photoconductive dipole antenna. Compared to an uncoated antenna with identical electrode geometry and optical excitation power, the Si_(3)N_(4) film-coated antenna has a higher effective DC resistance and larger breakdown voltage. As a result, the peak amplitude of generated THz radiation is significantly enhanced due to the Si_(3)N_(4) film-coated layer.

Keywords

320.7080 320.7130 including semiconductors 320.5390 picosecond phenomena ultrafast devices ultrafast processes in condensed matter

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Wei Shi, Jingzhou Xu, X.-C. Zhang. Terahertz generation from Si_(3)N_(4) covered photoconductive dipole antenna[J]. Chinese Optics Letters, 2003, 1(5): 05308

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Paper Information

Category: Ultrafast Optics

Received: Jan. 16, 2003

Accepted: --

Published Online: Jun. 6, 2006

The Author Email: X.-C. Zhang (zhangxc@rpi.edu)

DOI:

Topics

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