The structure characteristics of SIMOX/SOI (Separation by implanted oxygen/silicon on insulator) and DWB (direct wafer bonding)/SOI are discussed. Some planar optical waveguides samples with different thickness of layer were fabricated in DWB/SOI structure. The propagstion losses were measured for both TE and TM modes at wavelenths of 1.15 μm and 1.523 μm. The lowest loss is close to the intrinsic aborption of pure crystal silicon. It indicated that the DWB/SOI structure is a Potential material for optical waveguides.