With the increasing and extensive applications of high-voltage nanosecond solid-state pulse generators in various fields such as biology, industry, and environment, the pulse waveform, voltage amplitude, pulse duration, and pulse repetition frequency have become essential controllable variables for specific pulse power applications. To further reduce the size and cost of the pulsed power supply, a high-voltage nanosecond pulse modulator with high repetition frequency is proposed with positive Marx circuit, drivers with multiple pulse transformers as the core, and ns rising time. This driver enables the design of a high-voltage nanosecond pulse modulator with ns-level rise time and high repetition frequency. The proposed driver features a compact structure and eliminates the need for multiple isolated power supplies for driving. It allows the gate voltage of two MOSFETs to rise and fall rapidly and synchronously at a high repetition frequency, enabling the generation of gate voltage with controllable amplitude within one hundred nanoseconds. In the case, not only the maximum pulse width is not limited by the magnetic core saturation, but also the negative bias voltage can reliably turn off the switch, improving the reliability of the circuit. In addition, the influence of different turns and magnetic core materials on the driving waveform is studied. A 14-stage pulse modulator prototype is developed. Test results show that the output voltage and pulse width of the modulator based on the drivers are continuously adjustable, with the ability to change the pulse profile. The maximum output voltage reaches 5.5 kV with 100 ns to 50 ms width, minimum rise time of approximately 18 ns, and a continuous repetition frequency of 100 kHz.