Infrared and Laser Engineering, Volume. 45, Issue 12, 1225004(2016)
Parameters model of terahertz planar Schottky diode
Based on the SPICE parameters model of ideal diode, a modified small-signal equivalent circuit model of terahertz planar Schottky diode was built according to the physical structure of the diode. On-wafer device-under-test (DUT) structure based on CPW de-embed method was designed according to the equivalent circuit model of the diode. The small-signal S parameters were measured in the frequency range of 0.1-50 GHz and 75-110 GHz. All the parameters of diode model such as capacitances, resistances and inductances were extracted via the test results. Comparison between DC I-V resistances, empirical formula capacitances and high frequency parameters was made. Both of the capacitances and resistances at high frequencies were different from low frequencies. The built small-signal equivalent circuit model of terahertz planar Schottky diode was validated by simulation and the results of model simulation agree well with the DUT S-parameters. Complete equivalent circuit model and the testing method can more accurately represent the working state of the device under high frequency compared with the ideal diode SPICE model and the parameters of the traditional extraction method. This robust method is suitable for Schottky diode model extraction, which is useful for further nonlinear circuit design and optimization in terahertz wave frequencies.
Get Citation
Copy Citation Text
Zhao Xiangyang, Wang Junlong, Xing Dong, Yang Dabao, Zhang Lisen, Liang Shixiong, Feng Zhihong. Parameters model of terahertz planar Schottky diode[J]. Infrared and Laser Engineering, 2016, 45(12): 1225004
Category: 太赫兹技术及应用
Received: Apr. 20, 2016
Accepted: May. 23, 2016
Published Online: Jan. 12, 2017
The Author Email: Xiangyang Zhao (uestcxyz@qq.com)