Optoelectronics Letters, Volume. 17, Issue 11, 656(2021)
Improved performance of CdSe/ZnS quantum dot light-emitting diodes through doping with small molecule CBP
The poor film formation of CdSe/ZnS quantum dots (QDs) during spin-coating makes a substantial impact on the device performance of quantum dot light-emitting diodes (QLEDs). This work proposes a method to improve the morphology of the quantum dot light-emitting layer (EML) by adding small organic molecular 4,4'-Bis(9H-carbazol-9-yl) biphenyl (CBP) into the layer. Its surface roughness reduces from 6.21 nm to 2.71 nm, which guarantees a good contact between hole transport layer (HTL) and EML. Consequently, the CdSe/ZnS QDs:CBP based QLED achieves maximum external quantum efficiency (EQE) of 5.86%, and maximum brightness of 10 363 cd/m2. It is demonstrated that the additive of small organic molecules could be an effective way to improve the brightness and the efficiency of QLEDs.
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LIN Yuhan, HUANG Ye, ZHU Qianpeng, ZHANG Genggeng, HU Juntao. Improved performance of CdSe/ZnS quantum dot light-emitting diodes through doping with small molecule CBP[J]. Optoelectronics Letters, 2021, 17(11): 656
Received: Mar. 5, 2021
Accepted: Mar. 30, 2021
Published Online: Jan. 10, 2022
The Author Email: Juntao HU (jthu@hfut.edu.cn)