Nano-Micro Letters, Volume. 16, Issue 1, 227(2024)

New-Generation Ferroelectric AlScN Materials

Yalong Zhang1... Qiuxiang Zhu1,*, Bobo Tian1,**, and Chungang Duan12 |Show fewer author(s)
Author Affiliations
  • 1Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, People’s Republic of China
  • 2Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006 Shanxi, People’s Republic of China
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    Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner. However, complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices. The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma. This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films. The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated. Finally, the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.

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    Yalong Zhang, Qiuxiang Zhu, Bobo Tian, Chungang Duan. New-Generation Ferroelectric AlScN Materials[J]. Nano-Micro Letters, 2024, 16(1): 227

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    Paper Information

    Category: Research Articles

    Received: Mar. 14, 2024

    Accepted: May. 6, 2024

    Published Online: Jan. 23, 2025

    The Author Email: Zhu Qiuxiang (qxzhu@clpm.ecnu.edu.cn), Tian Bobo (bbtian@ee.ecnu.edu.cn)

    DOI:10.1007/s40820-024-01441-1

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