Acta Optica Sinica, Volume. 22, Issue 7, 852(2002)
Development of Elementary Arrangement for Exterme Ultraviolet Projection Lithography
The prototype for extreme ultraviolet projection lithography at 13 nm wavelength includes a laser plasma source, an ellipsoidal condenser, a transmission mask, the Schwarzschild objective, a resist coated wafer and the associated vacuum apparatus. The optical design is optimized to achieve a resolution better than 0.1 μm over a 0.1 mm diameter image field of view.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Development of Elementary Arrangement for Exterme Ultraviolet Projection Lithography[J]. Acta Optica Sinica, 2002, 22(7): 852