Chinese Journal of Lasers, Volume. 25, Issue 7, 632(1998)
An Analytical Solution to the Problem of Laser induced Heating and Melting of Semiconductors
An analytical method for treating the problem of the laser heating and melting is developed by suggesting a simple and reasonable temperature profile form. Temperature distribution in a material before melting as well as after melting is given and the movement of the phase interface is also obtained. As an illustrative example, computations are carried out on a silicon material and the results are in good agreement with those obtained by other authors.
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[in Chinese], [in Chinese], [in Chinese]. An Analytical Solution to the Problem of Laser induced Heating and Melting of Semiconductors[J]. Chinese Journal of Lasers, 1998, 25(7): 632