Acta Optica Sinica, Volume. 42, Issue 10, 1031003(2022)
Influence of SixNy Deposition Parameters on Intermixing of Quantum Wells
SixNy is often used as the suppression material of quantum well intermixing (QWI). In order to explore the effect of SixNy growth process on the intermixing effect of InGaAs/GaAs quantum well structure, a series of experiments are carried out on the process parameters of plasma enhanced chemical vapor deposition (PECVD) method, such as deposition time, SiH4 flow rate, and radio frequency (RF) power. The experimental results show that SixNy can protect the quantum well well, but its thickness has little effect on the inhibition effect of QWI. When the SiH4 flow rate is large, Si is rich in SixNy, and Si may diffuse during annealing to form electrical compensation with P-type ohmic contact layer, and at the same time induce quantum well intermixing, resulting in a large blue shift of its wavelength. With the decreases of SiH4 flow rate, the content of Si in SixNy decreases, and the refractive index decreases, but the blue shift is still large. In a certain range, the blue shift increases with the increase of RF power, and when the RF power is 50 W and the SiH4 flow rate is 50 sccm, SixNy plays a better in quantum well protection, and the blue shift is only 14.1 nm.
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Yuxiao Wang, Lingni Zhu, Li Zhong, Nan Lin, Suping Liu, Xiaoyu Ma. Influence of SixNy Deposition Parameters on Intermixing of Quantum Wells[J]. Acta Optica Sinica, 2022, 42(10): 1031003
Category: Thin Films
Received: Nov. 11, 2021
Accepted: Dec. 20, 2021
Published Online: May. 10, 2022
The Author Email: Zhu Lingni (lingxiao431@semi.ac.cn), Zhong Li (zhongli@semi.ac.cn)