Acta Optica Sinica, Volume. 18, Issue 6, 677(1998)
Laser Damage and Strengthening in Si and Ge
Laser induced damage in Si and Ge is investigated by using YAG laser with pulse durations of 10 ns and 250 μs, and the damage mechanism of the surfaces of Si and Ge was obtained. The resistivity of surfaces to laser damage was improved by using diamond films, dielectric films and laser pre-irradiation. The strengthening effects were discussed.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Laser Damage and Strengthening in Si and Ge[J]. Acta Optica Sinica, 1998, 18(6): 677