Optoelectronics Letters, Volume. 11, Issue 3, 187(2015)

High efficiency organic light-emitting diodes using CuOx/Cu dual buffer layers

Zheng CHEN1、* and Zhen-bo DENG2
Author Affiliations
  • 1National Teaching Center for Experimental Physic, Department of Physics, School of Science, Beijing Jiaotong University, Beijing 100044, China
  • 2Key Laboratory of Luminescence and Optical Information, Ministry of Education of China, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
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    An organic light-emitting diode (OLED) device with high efficiency and brightness is fabricated by inserting CuOx/Cu dual inorganic buffer layers between indium-tin-oxide (ITO) and hole-transport layer (HTL). The CuOx/Cu buffer layer limits the operating current density obviously, while the brightness and efficiency are both enhanced greatly. The highest brightness of the optimized device is achieved to be 14 000 cd/m2at current efficiency of 3 cd/A and bias voltage of 15 V, which is about 50% higher than that of the compared device without CuOx/Cu buffer layer. The highest efficiency is achieved to be 5.9 cd/A at 11.6 V with 3 400 cd/m2, which is almost twice as high as that of the compared device.

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    CHEN Zheng, DENG Zhen-bo. High efficiency organic light-emitting diodes using CuOx/Cu dual buffer layers[J]. Optoelectronics Letters, 2015, 11(3): 187

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    Paper Information

    Received: Feb. 4, 2015

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Zheng CHEN (chenzheng0913@gmail.com)

    DOI:10.1007/s11801-015-5025-y

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