Chinese Journal of Quantum Electronics, Volume. 29, Issue 5, 597(2012)
Influence of depolarization effect on optical rectification in GaAs quantum well
The influence of the depolarization effect on the optical rectification in electric-field-biased GaAs quantum well is studied using relaxation time approximation and a compact density-matrix approach. The results obtained show that the depolarization effect shifts the position of the resonance peak. For three different bias fields, F=3×104 V/cm, 4×104 V/cm, 8×104 V/cm, the peak position is ?ω=108.48 meV, 108.92 meV, 111.99 meV, respectively. The shift of the peak position is 5.96 meV, 5.99 meV and 6.28 meV, respectively, which increases with the bias field.
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PENG Fei. Influence of depolarization effect on optical rectification in GaAs quantum well[J]. Chinese Journal of Quantum Electronics, 2012, 29(5): 597
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Received: Nov. 2, 2011
Accepted: --
Published Online: Oct. 8, 2012
The Author Email: Fei PENG (peng-fei@ntu.edu.cn)