Chinese Journal of Quantum Electronics, Volume. 29, Issue 5, 597(2012)

Influence of depolarization effect on optical rectification in GaAs quantum well

Fei PENG*
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    The influence of the depolarization effect on the optical rectification in electric-field-biased GaAs quantum well is studied using relaxation time approximation and a compact density-matrix approach. The results obtained show that the depolarization effect shifts the position of the resonance peak. For three different bias fields, F=3×104 V/cm, 4×104 V/cm, 8×104 V/cm, the peak position is ?ω=108.48 meV, 108.92 meV, 111.99 meV, respectively. The shift of the peak position is 5.96 meV, 5.99 meV and 6.28 meV, respectively, which increases with the bias field.

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    PENG Fei. Influence of depolarization effect on optical rectification in GaAs quantum well[J]. Chinese Journal of Quantum Electronics, 2012, 29(5): 597

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    Paper Information

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    Received: Nov. 2, 2011

    Accepted: --

    Published Online: Oct. 8, 2012

    The Author Email: Fei PENG (peng-fei@ntu.edu.cn)

    DOI:10.3969/j.issn.1007-5461. 2012.05.014

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