1050-nm high power diode array module

Getao Tao; Shun Yao; Guoguang Lu; Yun Liu; Di Yao; Lijun Wang

Chinese Optics Letters, Volume. 5, Issue s1, 154(2007)

Getao Tao^1、*, Shun Yao¹, Guoguang Lu^1,2, Yun Liu^1,2, Di Yao^1,2, and Lijun Wang^1,2

¹State Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033

²Graduate School of the Chinese Academy of Sciences, Beijing 100039

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High power diode array module has been fabricated. The epitaxial structure is an InGaAs/GaAsP strain compensated single quantum well. The laser bars are made with a filling factor of 84.6%. The module's quasi-continuous wave (100 microseconds, 1000 Hz) peak power can reach to 88.6 W at a current of 100 A. The central wavelength is 1050 nm and the full width at half maximum is 4.2 nm.

Keywords

040.1240 140.3290 310.1620 140.5960

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Getao Tao, Shun Yao, Guoguang Lu, Yun Liu, Di Yao, Lijun Wang. 1050-nm high power diode array module[J]. Chinese Optics Letters, 2007, 5(s1): 154

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