Semiconductor Optoelectronics, Volume. 45, Issue 1, 117(2024)

High-reliability Bonding Process of Infrared Detector Chip

LI Junguang1...2,3, WANG Xiao2,3, QIAO Jun2,3, and LI Peng23 |Show fewer author(s)
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    Gold-wire bonding is widely used in the packaging of infrared detectors. In this study, a 25μm gold wire was selected to determine the best process parameters for bonding with respect to the tensile value of bonding strength based on the orthogonal experimental method. The combination of the ultrasonic process parameters of pressure, power, and time, with contact force was optimized, to improve electrical connection performance and connection strength of the bonded leads, thereby enhancing the signal transmission quality of the chip system. The combination of the wire bonding process parameters proposed in this study is applicable to the bonding of infrared detection chips.

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    LI Junguang, WANG Xiao, QIAO Jun, LI Peng. High-reliability Bonding Process of Infrared Detector Chip[J]. Semiconductor Optoelectronics, 2024, 45(1): 117

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    Paper Information

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    Received: Sep. 22, 2023

    Accepted: --

    Published Online: Jun. 25, 2024

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2023092202

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