In order to explore the problem of the difference of dose response of P-channel Metal Oxide Semiconductor(PMOS) dosimeter to photons of 60Co and 10 keV photons, comparative irradiation tests of 60Co Gamma ray and 10 keV X-ray on 400 nm-PMOS dosimeter with different gate voltages are carried out. The effect of oxide trap charge and interface state trap charge are separated by the mid gap technique and charge pumping method. It is found that the response of PMOS to 10 keV X-ray is significantly lower than that to 60Co gamma rays. The main difference is from oxides-trap charge. The difference of annealing indicates that the trap charge competition mechanism is different between gamma and X-rays, and different analysis methods also bring some discrepancy. By using dose factor and charge yield correction, the difference of dose response is reduced, and the microphysical mechanism of the response is explained. The dose response difference between gamma and 10 keV X-rays can be greatly reduced by effective dose correction and charge yield correction, which provides reference for the application of PMOS in low energy photon radiation environment.