Infrared Technology, Volume. 42, Issue 11, 1077(2020)

Preliminary Study on Storage Life Distribution of Semiconductor Device Based on Weibull Distribution

Qiaofang WANG1,2、*, Wanxiang ZHENG1, Chongwen WANG2, Jian LIU2, Rui LUO1,2, and Yuanrong ZHAO2
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  • 1[in Chinese]
  • 2[in Chinese]
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    In this study, a semiconductor device was tested for high temperature storage at 90℃, 80℃ and 70℃, and the failure data is obtained. Based on the Weibull distribution model, parameter estimation was carried out by the least square method. The failure distribution function of the semiconductor device was obtained. And the classical reliability theory was applied to calculate the characteristic life, reliable life and MTBF of the product at 90℃, 80℃ and 70℃. Using the Arrhenius model, the storage characteristic life of the semiconductor device at room temperature was obtained, according to the storage characteristic life of 90℃, 80℃ and 70℃. The results show that the method is reasonable, simple and effective, and the results can be used to derive the normal temperature storage life.

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    WANG Qiaofang, ZHENG Wanxiang, WANG Chongwen, LIU Jian, LUO Rui, ZHAO Yuanrong. Preliminary Study on Storage Life Distribution of Semiconductor Device Based on Weibull Distribution[J]. Infrared Technology, 2020, 42(11): 1077

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    Paper Information

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    Received: Apr. 12, 2020

    Accepted: --

    Published Online: Jan. 11, 2021

    The Author Email: Qiaofang WANG (qfangwang@sina.com)

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