Chinese Optics Letters, Volume. 9, Issue 9, 093101(2011)
Characteristics of the crystalline and luminescence properties of a-plane GaN films grown on \gamma-LiAlO2 (302) substrates
A-plane GaN films are deposited on (302) \gamma-LiAlO2 substrates by metalorganic chemical vapor deposition (MOCVD). The X-ray diffraction (XRD) results indicate that the in-plane orientation relationship between GaN and LAO substrates is [010]LAO//[0001]GaN and [203]LAO//[1100]GaN with 0.03% and 2.85% lattice mismatch, respectively. Raman scattering results indicate that the strain in the films decreases along with the increase in the thickness of the films. In addition to the band edge emission at 3.42 eV, defects-related luminescence at 3.35 eV is observed in the photoluminescence (PL) spectra. The cathodoluminescence (CL) spectra indicate that the 3.35-eV emission is related to the V pits.
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Tingting Jia, Shengming Zhou, Hui Lin, Hao Teng, Xiaorui Hou, Jianqi Liu, Jun Huang, Min Zhang, Jianfeng Wang, Ke Xu. Characteristics of the crystalline and luminescence properties of a-plane GaN films grown on \gamma-LiAlO2 (302) substrates[J]. Chinese Optics Letters, 2011, 9(9): 093101
Category: Thin films
Received: Mar. 18, 2011
Accepted: Apr. 21, 2011
Published Online: Jul. 13, 2011
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