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Acta Photonica Sinica, Volume. 34, Issue 1, 11(2005)

Passive Q-switched Modelocking Diode-end-pumped Yb∶YAG with Surface-state Type of Semiconductor Saturable Absorption Mirror

[in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    A new type of surface-state semiconductor saturable absorption mirror was introduced, with which passive Q-switched modelocking of diode-end-pumped Yb∶ YAG laser was realized. At the 1.4 W of pumping power, Q-switched modelocking seires was obtained, which has 1 mW average output and 200 MHz frequency.

    Keywords
    Q-switched modelockingSurface stateYb∶ YAG laserSemiconductor saturable absorption mirror
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Passive Q-switched Modelocking Diode-end-pumped Yb∶YAG with Surface-state Type of Semiconductor Saturable Absorption Mirror[J]. Acta Photonica Sinica, 2005, 34(1): 11

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    Paper Information

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    Received: Nov. 4, 2003

    Accepted: --

    Published Online: Jun. 12, 2006

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology