A 10 Gb/s optoelectronic integrated circuits (OEIC) optical receiver front-end has been studied and fabricated based on domestic material and semiconductor process. A limiting amplifier (LA) has been designed and realized by using depletion mode pseudomorphic high electron mobility transistor (PHEMT). The OEIC optical receiver comprises a metal-semiconductor-metal (MSM) photodetector and a current mode transimpedance amplifier (TIA),and a device model has been established and optimized by simulation software SILVACO. The photodetector has a photosensitive area of 50 μm×50 μm,a bandwidth of 10 GHz and a capacitance of 3 fF/μm. The etch-stop process has been developed completely and applied to the fabrication of OEIC device,and the chip has an area of 1511 μm×666 μm. The bandwidth of LA is expanded by inductance which has been simulated by software HFSS. The chip area is 1950 μm×1910 μm and the measured results demonstrate a transfer rate of 3.125 Gb/s (10 and 500 mV) with constant output swing 500 mV.