Journal of Infrared and Millimeter Waves, Volume. 43, Issue 6, 755(2024)
Study on photoelectric performance of ultra-small pixel pitch micro-mesa InGaAs detector
The pursuit of ultra-small pixel pitch InGaAs detectors necessitates a meticulous approach to addressing challenges associated with crosstalk reduction and dark current minimization. By developing the fabrication process technology of micro-mesa InGaAs detector, a test structure featuring a micro-mesa InGaAs photosensitive chip with 10 μm and 5 μm pixel pitch was successfully prepared. Subsequently, a comprehensive investigation was conducted to analyze the impact of the micro-mesa structure on crosstalk and dark current characteristics of the InGaAs detector. The obtained results revealed the efficacy of the micro-mesa structure in effectively suppressing crosstalk between adjacent pixels when the isolation trench etches into the absorption layer. However, a noteworthy challenge emerged as the fabrication processes induced material damage, leading to a considerable increase in recombination current and Ohmic leakage current. This adverse effect, in turn, manifested as a dark current escalation by more than one order of magnitude. The significance of these findings offers a novel perspective for the manufacturing of ultra-small pixel pitch InGaAs focal plane detectors.
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Yu TIAN, Chun-Lei YU, Xue LI, Xiu-Mei SHAO, Tao LI, Bo YANG, Xiao-Yuan YU, Jia-Shen CAO, Hai-Mei GONG. Study on photoelectric performance of ultra-small pixel pitch micro-mesa InGaAs detector[J]. Journal of Infrared and Millimeter Waves, 2024, 43(6): 755
Category: Infrared Physics, Materials and Devices
Received: Feb. 1, 2024
Accepted: --
Published Online: Dec. 13, 2024
The Author Email: YU Chun-Lei (yuchunlei@mail.sitp.ac.cn), GONG Hai-Mei (hmgong@mail.sitp.ac.cn)