Electro-Optic Technology Application, Volume. 30, Issue 3, 67(2015)

Magnetron Sputtering Method for VO2 Thin Film and Resistance Mutation Test

WANG An1... XU Wei-dong1, ZHANG Bao-shan2, YANG Jun-tang1 and CUI Guang-zhen1 |Show fewer author(s)
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less

    Vanadium dioxide (VO2) films with the phase changing characteristic are prepared on the silicon substrate (100) by the reactive magnetron sputtering at room temperature and heat treatment process. XRD and SEM are used to characterize the phase structure and surface morphology of the thin films. After heat treatment, film grain began to grow, and at the 2θ=27.9°、37.1°、42.3°, the(011), (200), (210) diffraction peak values of VO2 are presented respectively. The morphology of film is compact and uniform. The square resistance of variable temperature testing is analyzed, and after the phase changing, the film resistance mutation is up to 3 orders of magnitude. And the application prospect of VO2 film in the field of camouflage is also analyzed.

    Tools

    Get Citation

    Copy Citation Text

    WANG An, XU Wei-dong, ZHANG Bao-shan, YANG Jun-tang, CUI Guang-zhen. Magnetron Sputtering Method for VO2 Thin Film and Resistance Mutation Test[J]. Electro-Optic Technology Application, 2015, 30(3): 67

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Apr. 20, 2015

    Accepted: --

    Published Online: Jul. 10, 2015

    The Author Email:

    DOI:

    CSTR:32186.14.

    Topics