Electro-Optic Technology Application, Volume. 30, Issue 3, 67(2015)
Magnetron Sputtering Method for VO2 Thin Film and Resistance Mutation Test
Vanadium dioxide (VO2) films with the phase changing characteristic are prepared on the silicon substrate (100) by the reactive magnetron sputtering at room temperature and heat treatment process. XRD and SEM are used to characterize the phase structure and surface morphology of the thin films. After heat treatment, film grain began to grow, and at the 2θ=27.9°、37.1°、42.3°, the(011), (200), (210) diffraction peak values of VO2 are presented respectively. The morphology of film is compact and uniform. The square resistance of variable temperature testing is analyzed, and after the phase changing, the film resistance mutation is up to 3 orders of magnitude. And the application prospect of VO2 film in the field of camouflage is also analyzed.
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WANG An, XU Wei-dong, ZHANG Bao-shan, YANG Jun-tang, CUI Guang-zhen. Magnetron Sputtering Method for VO2 Thin Film and Resistance Mutation Test[J]. Electro-Optic Technology Application, 2015, 30(3): 67
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Received: Apr. 20, 2015
Accepted: --
Published Online: Jul. 10, 2015
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CSTR:32186.14.