Optoelectronics Letters, Volume. 15, Issue 2, 89(2019)

Effects of dispersion, absorption and interface fluctuation on the reflection spectra of porous silicon microcavity devices

Li Chun-cai1, Jia Zhen-hong2、*, He Lei1, and Huang Xiao-hui2
Author Affiliations
  • 1School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China
  • 2School of Information Science and Engineering, Xinjiang University, Urumqi 830046, China
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    One problem associated with microcavity devices is the significant difference between the reflection spectra of fabricated porous silicon microcavity (PSM) devices and those obtained by theoretical calculation of ideal microcavity devices. To address this problem, studies were carried out to determine the effects of the refractive index dispersion, the absorption of the porous silicon layer and the fluctuation of the dielectric interface on the reflection spectra of PSM devices. The results are in good agreement with those obtained experimentally from the fabricated PSM devices, which provides a theoretical basis for the design of PSM sensors.

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    Chun-cai Li, Zhen-hong Jia, Lei He, Xiao-hui Huang. Effects of dispersion, absorption and interface fluctuation on the reflection spectra of porous silicon microcavity devices[J]. Optoelectronics Letters, 2019, 15(2): 89

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    Paper Information

    Received: Sep. 13, 2018

    Accepted: Oct. 24, 2018

    Published Online: Apr. 16, 2019

    The Author Email: Jia Zhen-hong (jzhh@xju.edu.cn)

    DOI:10.1007/s11801-019-8148-8

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