Journal of Terahertz Science and Electronic Information Technology , Volume. 22, Issue 10, 1168(2024)

Design of a 10 kV/10 ns /20 A all solid state pulse generator

SHI Xiaoyan1...2, YANG Hao1,2, ZHENG Qianglin1,2, YAN Eryan1,2, and BAO Xiangyang12 |Show fewer author(s)
Author Affiliations
  • 1Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang Sichuan 621999, China
  • 2Key Laboratory of High Power Microwave Technology, China Academy of Engineering Physics, Mianyang Sichuan 621999, China
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    To obtain the high-voltage high-repetition-rate pulse output with a half-width of about 10 ns required for plasma research, two sets of high-voltage switch modules composed of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) switches in series are used. By combining traditional capacitor energy storage pulse generation circuits with pulse tail cutting circuits, narrow pulses are generated. Based on the actual working requirements of the switches, adaptive design and simulation optimization of the narrow pulse generation circuit are carried out; according to the optimization results, an experimental device for narrow pulse generation circuit is built. After testing, a pulse output with a peak voltage about 10 kV, a half-width about 10 ns, and a front edge about 6 ns is obtained on a load of 500 Ω.

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    SHI Xiaoyan, YANG Hao, ZHENG Qianglin, YAN Eryan, BAO Xiangyang. Design of a 10 kV/10 ns /20 A all solid state pulse generator[J]. Journal of Terahertz Science and Electronic Information Technology , 2024, 22(10): 1168

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    Paper Information

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    Received: Mar. 27, 2023

    Accepted: Dec. 10, 2024

    Published Online: Dec. 10, 2024

    The Author Email:

    DOI:10.11805/tkyda2023064

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