Laser & Optoelectronics Progress, Volume. 53, Issue 10, 101401(2016)
Research on Laser Processing Technology of Silicon Substrate AlGaInP LED
With semiconductor laser, a silicon substrate AlGaInP LED is prepared, and the effects of laser energy density, repetition rate, and processing speed of the platform on the processing results are studied. By means of electron microscope and other test tools, the structural characteristics of the surface and side morphologies of silicon substrate AlGaInP LED chips are analyzed, and the superior processing parameters are obtained.
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Xiao Heping, Chen Liang, Ma Xiangzhu, Yang Kai. Research on Laser Processing Technology of Silicon Substrate AlGaInP LED[J]. Laser & Optoelectronics Progress, 2016, 53(10): 101401
Category: Lasers and Laser Optics
Received: Apr. 18, 2016
Accepted: --
Published Online: Oct. 12, 2016
The Author Email: Heping Xiao (ietgu@163.com)