Analysis and Optimum Design on Ge<sub>x</sub>Si<sub>1-x</sub>/Si Strained-Layer Superlattices Avalanche Photodetector

[in Chinese]; [in Chinese]

Acta Optica Sinica, Volume. 16, Issue 6, 839(1996)

Analysis and Optimum Design on Ge_xSi_1-x/Si Strained-Layer Superlattices Avalanche Photodetector

[in Chinese] and [in Chinese]

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[in Chinese]

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The GexSi1-x/Si strained-layer superlattices avalanche photodetector has been studied and optimum designed. Its optimum structure parameters are: the thickness of i-Si avalanehe region is 1. 8~2 μm; the carrier concentration of p-Si region is 10 18 cm-3 and thickness is 17 nm; the total thickness of superlattices is 340 nm. The detector can be operated in the range of 1.3~1.6 μm.

Keywords

avalanche photodetector (APD)strained-layer superlattice GeSi

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[in Chinese], [in Chinese]. Analysis and Optimum Design on Ge_xSi_1-x/Si Strained-Layer Superlattices Avalanche Photodetector[J]. Acta Optica Sinica, 1996, 16(6): 839

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Paper Information

Category: Optical Devices

Received: Mar. 26, 1995

Accepted: --

Published Online: Dec. 4, 2006

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology