Optoelectronics Letters, Volume. 16, Issue 6, 401(2020)

Synthesis and opto-electrical properties of Cu2NiSnS4 nanoparticles using a facile solid-phase process at low temperature

Shi-na LI1... Rui-xin MA2,* and Jian-wen NIU2 |Show fewer author(s)
Author Affiliations
  • 1Tianjin Research Institute for Water Transport Engineering, Ministry of Transport, Tianjin 300000, China
  • 2School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083,China
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    Cu2NiSnS4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180 °C. The crystalline structure, morphology and optical properties of the Cu2NiSnS4 nanoparticles were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM) and ultraviolet-visible (UV-vis) spectrophotometer. The band gap and conversion efficiency of Cu2NiSnS4 nanoparticles were studied at various temperature. The results showed that the Cu2NiSnS4 nanoparticles exhibited an optimum band gap of 1.58 eV and a conversion efficiency of 0.64% at 180 °C, indicating that it maybe be useful in low-cost thin film solar cells.

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    LI Shi-na, MA Rui-xin, NIU Jian-wen. Synthesis and opto-electrical properties of Cu2NiSnS4 nanoparticles using a facile solid-phase process at low temperature[J]. Optoelectronics Letters, 2020, 16(6): 401

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    Paper Information

    Received: Nov. 7, 2019

    Accepted: Mar. 25, 2020

    Published Online: Dec. 25, 2020

    The Author Email: Rui-xin MA (maruixin@ustb.edu.cn)

    DOI:10.1007/s11801-020-9188-9

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