Optoelectronics Letters, Volume. 9, Issue 3, 198(2013)
Effect of thickness on optoelectrical properties of Nbdoped indium tin oxide thin films deposited by RF magnetron sputtering
Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4 Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.
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LI Shi-na, MA Rui-xin, MA Chun-hong, LI Dong-ran, XIAO Yu-qin, HE Liang-wei, ZHU Hong-min. Effect of thickness on optoelectrical properties of Nbdoped indium tin oxide thin films deposited by RF magnetron sputtering[J]. Optoelectronics Letters, 2013, 9(3): 198
Received: Jan. 11, 2013
Accepted: --
Published Online: Oct. 12, 2017
The Author Email: Rui-xin MA (maruixin@ustb.edu.cn)