We studied the relationship between the conditions under different sputtering pressure and the change of stress during the deposition of W/Si multilayer films. The multilayer structures are measured by using X-ray diffractometer. An online stress measurement device was used to measure the stress evolution during the deposition. Experimental results clearly indicate that the compressive stress decreases with the increase of the sputtering pressure from 0.05 Pa to 1.10 Pa. Then the stress changes to tension. The value of stress reaches the minimum at sputtering pressure of 0.60 Pa. The result is instructive in reducing the film stress.