Acta Optica Sinica, Volume. 30, Issue 4, 1088(2010)
Stimulated Emission in Quantum Dots formed by Pulsed Laser on SiGe Film
Fabrication of quantum dots (QD) by pulsed laser on SiGe alloy samples is reported. After annealing,some peaks of stimulated emission were observed in the region of 720-800 nm which have threshold behavior obviously. It was found that the peaks of stimulated emission have an obvious red-shift from Si QD to SiGe QD. Oxide layer on SiGe quantum dots involves Si=O bonds and Ge=O bonds according to the Fourier transform infrared spectroscopy (FTIR),which could produce the localized gap states of electrons (or even the trapped exciton). Calculation shows that Ge=O bonds emerging on SiGe QD could decrease the distance between the valence band and the localized gap states which can interpret the red-shift of stimulated emission on SiGe QD.
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Huang Weiqi, Lü Quan, Zhang Rongtao, Wang Xiaoyun, Liu Shirong, Qin Chaojian. Stimulated Emission in Quantum Dots formed by Pulsed Laser on SiGe Film[J]. Acta Optica Sinica, 2010, 30(4): 1088
Category: Materials
Received: Aug. 2, 2009
Accepted: --
Published Online: Apr. 20, 2010
The Author Email: Weiqi Huang (WQHuang2001@yahoo.com)