Different regulation technologies that affect the performance of Hg1-xCdxTe infrared detectors are briefly introduced, including material regulation (composition and temperature, doping concentration, pressure, and stress, etc.), device structure regulation (n-on-p, p-on-n, p-i-n, n-B-n, etc.), and process regulation (the influence of various process regulation on material preparation and device preparation). This research aims to properly regulate device performance, effectively reduce the dark current of the device, and improve the operating temperature of the device, so as to promote the development of Hg1-xCdxTe infrared detectors in reducing costs, decreasing power consumption, and improving reliability.