Chinese Journal of Lasers, Volume. 18, Issue 8, 561(1991)
A gain-guided GaAlAs/GaAs phase-locked laser array
A gain-guided GaAlAs/GaAs phase-locked laser array is described, which consists of multi-stripes made by Zn diffusion with oxide mask. A typical threshold current of less than 200mA and an output power of more than 240mW were obt ained, and the phase-locking is shown in the far field patterns.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. A gain-guided GaAlAs/GaAs phase-locked laser array[J]. Chinese Journal of Lasers, 1991, 18(8): 561
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