Acta Photonica Sinica, Volume. 47, Issue 3, 304002(2018)
Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode
In0.53Ga0.47As/InP Avalanche Photodiode (APD) with low dark current, wide-range response is prepared by molecular beam epitaxy and open-tube zinc diffusion method. The dark current is less than 10 nA at 0.95Vb (Vb is the avalanche breakdown voltage), and the capacitance density is as low as 1.43×10-8 F/cm2 when the bias voltage is -5 V. The response range of APD is 50 nW~20 mW and the responsibility is up to 1.13 A/W under 1 310 nm infrared laser at 30 V reverse bias voltage. The breakdown voltage and punch-through voltage are investigated by changing concentration of the charge layer and thickness of the multiplication layer. The result shows that the punch-through voltage increases linearly, conversely, the breakdown voltage decreases linearly with increasing concentration of the charge layer. Further, the punch-through voltage increases linearly and breakdown voltage also increases with increasing thickness of the multiplication layer, while the surface density of charge layer is 4.8×1012 cm-2. Through optimizing SAGCM-APD device structure, the APD device achieves a 25 V punch-through voltage and a 57 V breakdown voltage, with low dark current, and wide-range response characteristics.
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YUAN Zheng-bing, XIAO Qing-quan, YANG Wen-xian, XIAO Meng, WU Yuan-yuan, TAN Ming, DAI Pan, LI Xue-fei, XIE Quan, LU Shu-long. Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode[J]. Acta Photonica Sinica, 2018, 47(3): 304002
Received: Aug. 31, 2017
Accepted: --
Published Online: Feb. 1, 2018
The Author Email: Zheng-bing YUAN (zbyuan2016@sinano.ac.cn)