Frontiers of Optoelectronics, Volume. 4, Issue 2, 137(2011)
Growth of large size AgGaGeS4 crystal for infrared conversion
Single crystals of AgGaGeS4 (AGGS) were grown in a modified Bridgman furnace with 25 mm in diameter and 70mm in length. The transmission spectra of as-grown AGGS slices were measured on a Hitachi 270 - 30 spectrophotometer, the fabricated device crystal was 5 mm×5mm×3.5 mm in dimension and its absorption was 0.04-0.15 cm-1. Frequency doubling of 2.79 and 8 μm laser radiation were investigated using fabricated device crystals with thicknesses of 3.5 and 2.7 mm respectively.
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Haixin WU, Youbao NI, Chen LIN, Mingsheng MAO, Ganchao CHENG, Zhenyou WANG. Growth of large size AgGaGeS4 crystal for infrared conversion[J]. Frontiers of Optoelectronics, 2011, 4(2): 137
Received: Sep. 15, 2010
Accepted: Sep. 30, 2010
Published Online: Sep. 21, 2012
The Author Email: WU Haixin (hxwu@ircrystal.com)