The relationship among the characteristics of InGaAsP/InP SPAD, such as photon detection efficiency(PDE) and dark count rate(DCR), and the parameters of the SPAD, like InGaAsP band gap,electric field distribution, avalanche length and operating temperature, was analyzed. The DCR of the SPAD was effectively decreased by using the InxGa1-xAsyP1-y(x=0.78, y=0.47) as photon absorption layer instead of the InxGaAs(x=0.53) and controlling avalanche length of InP multiplication region precisely. According to good lattice matching of InGaAsP and InP, high quality InGaAsP/InP heterojunction was epitaxially grown on InP substrate to detect single photon of 1.06 μm, with 1.03 eV band gap and 1.2 μm cutoff wavelength. InGaAsP/InP SPAD was designed and manufactured for 1.06 μm detection. And measurement results show that DCR is about 20 kHz under 20% PDE on 270 K. The device can detect random arrival photons based on time correlated single photon counting technique under active quenching mode.