The Light Emitting Diode model is presented based on the scattering theory.Taking the influence of low dose ionization radiation damage into consideration,the model of the relationship between device scattering factors and radiation damage is introduced.Over a wide range of input current,the electrical characteristics of devices are meassured for different ionization radiation situations.The experimental results agree well with the proposed models.After the analysis of the experimental results and the above-mentioned models,the relationship between low dose ionization radiation damage and Light Emitting Diode performance degradation is studied.It is proved that with increasing electron density in recombination center，the interface trap density and scattering probability increase slightly,which leads to slight degradation of I-V and L-V characteristics in Light Emitting Diode .Because heavy particle radiation can cause displacement effect directly,which leads to significant increase of interface trap density,heavy particle radiation has much more influence on the performance of Light Emitting Diode than ionization radiation.