Semiconductor Optoelectronics, Volume. 43, Issue 3, 522(2022)

Investigation of External Quantum Efficiency of GaNbased MicroLEDs

YANG Hang, HUANG Wenjun, ZHANGHU Mengyuan, LIN Yonghong, and LIU Zhaojun*
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  • [in Chinese]
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    GaNbased microsized lightemitting diodes (microLED) has gradually become the main light source in many optoelectronic devices such as visible light communications and nextgeneration displays. Low external quantum efficiency (EQE),caused by nonradiative recombination and quantum confined Stark effect (QCSE),is the main bottleneck in applications of microLEDs. In this report, the reasons for low EQE of microLEDs are discussed, and the physical characteristics of microLEDs are analyzed and several optimal methods are suggested to improve EQE.

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    YANG Hang, HUANG Wenjun, ZHANGHU Mengyuan, LIN Yonghong, LIU Zhaojun. Investigation of External Quantum Efficiency of GaNbased MicroLEDs[J]. Semiconductor Optoelectronics, 2022, 43(3): 522

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    Paper Information

    Special Issue:

    Received: Jun. 10, 2022

    Accepted: --

    Published Online: Aug. 1, 2022

    The Author Email: Zhaojun LIU (liuzj@sustech.edu.cn)

    DOI:10.16818/j.issn1001-5868.2022061001

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