Semiconductor Optoelectronics, Volume. 43, Issue 3, 522(2022)
Investigation of External Quantum Efficiency of GaNbased MicroLEDs
GaNbased microsized lightemitting diodes (microLED) has gradually become the main light source in many optoelectronic devices such as visible light communications and nextgeneration displays. Low external quantum efficiency (EQE),caused by nonradiative recombination and quantum confined Stark effect (QCSE),is the main bottleneck in applications of microLEDs. In this report, the reasons for low EQE of microLEDs are discussed, and the physical characteristics of microLEDs are analyzed and several optimal methods are suggested to improve EQE.
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YANG Hang, HUANG Wenjun, ZHANGHU Mengyuan, LIN Yonghong, LIU Zhaojun. Investigation of External Quantum Efficiency of GaNbased MicroLEDs[J]. Semiconductor Optoelectronics, 2022, 43(3): 522
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Received: Jun. 10, 2022
Accepted: --
Published Online: Aug. 1, 2022
The Author Email: Zhaojun LIU (liuzj@sustech.edu.cn)