Laser & Optoelectronics Progress, Volume. 50, Issue 11, 111404(2013)
808 nm GaAs/AlGaAs Laser Diode Bar with Current Non-Injection Areas Near the Facets
After He ion implantation, p-GaAs will obtain higher resistivity than before. To improve the catastrophic optical damage (COD) level of 808 nm GaAs/AlGaAs laser diode bar, about 25 μm-long current non-injection areas are introduced near both facets by He ion implantation. The COD level of a conventional 1 cm laser diode bar with 19 emitters is 30W, while the He ion implantation 1 cm laser diode bar exhibits no COD failure at 42.7 W.
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Liu Bin, Liu Yuanyuan. 808 nm GaAs/AlGaAs Laser Diode Bar with Current Non-Injection Areas Near the Facets[J]. Laser & Optoelectronics Progress, 2013, 50(11): 111404
Category: Lasers and Laser Optics
Received: May. 8, 2013
Accepted: --
Published Online: Oct. 20, 2013
The Author Email: Bin Liu (rays_liu@126.com)