Chinese Journal of Lasers, Volume. 28, Issue 6, 494(2001)
808 nm Wavelength High Power Semiconductor Laser Arrays
High power semiconductorlaser stack arrays, grown by MBE have been prepared. The epitaxial structure for LD is anoptimized SQW GRIN SCH structure, and cm bars are made with a fill factor of 60%. A LDstack assembly with water cooling is formed to obtain an effective heat delivery ability.The following results are preliminarily obtained: Ith of the stack lasers is 12A, CW output power can reach to 40 W at 30 A; FWHM of the lasing spectrum is 6 nm with acentral wavelength of 810 nm, and the slope efficiency (ηs) is 2.2 W/A.
Keywords
Tools
Get Citation
Copy Citation Text
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 808 nm Wavelength High Power Semiconductor Laser Arrays[J]. Chinese Journal of Lasers, 2001, 28(6): 494
Paper Information
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20