Spectroscopy and Spectral Analysis, Volume. 31, Issue 6, 1446(2011)

GaN-Based White-Light-Emitting Diodes with Low Color Temperature and High Color Rendering Index

WANG Feng1、*, HUANG Xiao-hui1, WANG Huai-bing1, LIU Jian-ping1, FAN Ya-ming1, ZHU Yun-zhi2, and JIN Zheng2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    The luminescence properties of high color rendering white LED depending on the proportions of mixed phosphor powders were investigated by adopting green and red phosphors stimulated by a 440 nm InGaN/GaN based blue LED. The results show that when the proportion of A/B type silica gels and green/red phosphor powders is 0.5∶0.5∶0.2∶0.03, two luminance bands are stimulated and their wavelength peaks are 535 and 643 nm, respectively. The minimum color temperature can reach 3 251 K, while the color rendering is as high as 88.8. Compared with the traditional white LED fabricated by yellow YAG-phosphors-coated high efficiency 460 nm blue LED, the color temperature is lower and the color rendering index can be increased by almost 26%.

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    WANG Feng, HUANG Xiao-hui, WANG Huai-bing, LIU Jian-ping, FAN Ya-ming, ZHU Yun-zhi, JIN Zheng. GaN-Based White-Light-Emitting Diodes with Low Color Temperature and High Color Rendering Index[J]. Spectroscopy and Spectral Analysis, 2011, 31(6): 1446

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    Paper Information

    Received: Sep. 15, 2010

    Accepted: --

    Published Online: Jan. 5, 2012

    The Author Email: Feng WANG (fwang2008@sinano.ac.cn)

    DOI:10.3964/j.issn.1000-0593(2011)06-1446-04

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