In the homoepitaxial growth of silicon carbide (4H-SiC) by chemical vapor deposition (CVD), the distribution of its temperature field is crucial for the quality of the epitaxial layer. The CVD temperature field was simulated and experimentally verified using on-axis 4H-SiC homogeneous epitaxy. It is found that the 3C-SiC crystal polytype inclusions in the on-axis 4H-SiC epitaxial layers are closely related to the temperature field distribution in the growth chamber. The results validate the simulation with a high degree of consistency in above two′s temperature distributions, which also verify the accuracy of the simulation data.