Laser & Optoelectronics Progress, Volume. 55, Issue 9, 91603(2018)
Modulation Mechanism of P-Doping on Photoelectric Properties of Two-Dimensional SiC
The geometrical structures, electronic structures and optical properties of the two-dimensional (2D) SiC doped with P with different concentrations are investigated by the first principle method. The results show that, the lattice constant and the bandgap of 2D SiC doped with P gradually decrease with the increase of P doping concentration. The valence band is mainly composed of the hybridization of the electrons of C-2p, Si-3p and P-3p states, while the conduction band is mainly composed of the electrons of Si-3p state. The P doping weakens the covalency and increases the ionic property for the C—Si bond. The P doping expands the optical absorption range of 2D SiC, and makes the absorption coefficient and the refractive index increase with the increase of doping concentration, which indicates that P doping can effectively improve the absorption for both the visible and infrared light.
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Yan Wanjun, Zhang Chunhong, Qin Xinmao, Zhang Zhongzheng, Zhou Shiyun. Modulation Mechanism of P-Doping on Photoelectric Properties of Two-Dimensional SiC[J]. Laser & Optoelectronics Progress, 2018, 55(9): 91603
Category: Materials
Received: Feb. 11, 2018
Accepted: --
Published Online: Sep. 8, 2018
The Author Email: Wanjun Yan (yanwanjun7817@163.com)