The CMOS image sensor integrated with high frame rate and high sensitivity pin photodiode array was designed. Compared with pn photodiode, pin photodiode presents the advantages of small junction capacitance and high quantum efficiency. In order to promote the signaltonoise ratio, the sensor implements a new correlated double sampling (CDS) circuit for eliminating KTC noise while working in the integration during reading mode. In this paper, linear CMOS Image sensor based on CTIA pixel circuit was implemented in 0.35μm PINCMOS process, and the photoelectric response of the device was tested and evaluated. The results show that sensitivity is 3000V/(lx·s), and quantum efficiency is 96% at 700nm wavelength. At a frame rate of 40kHz, the signaltonoise is 7 with the illumination down to 0.05lx, which is suitable for highspeed detection under weak light signal.